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Spin injection into Si in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer

机译：在三端垂直和四端子中自旋注入si 具有超薄mg的Fe / mg / mgO / si隧道结的横向器件插入层

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Sato, Shoichi; Nakane, Ryosho; Hada, Takato; Tanaka, Masaaki;
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1. Spin injection into silicon in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer (vol 96, 235204, 2017) [J] . Sato Shoichi, Nakane Ryosho, Hada Takato, Physical review, B . 2018,第19期

机译：用Fe / Mg / MgO / Si隧道连接的三端垂直和四端子横向装置中的硅旋转进入硅，具有超薄Mg插入层（Vol 96,235204,2017）
2. Spin injection into silicon in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer [J] . Shoichi Sato, Ryosho Nakane, Takato Hada, Physical review . 2017,第23期

机译：在具有超薄Mg插入层的Fe / Mg / MgO / Si隧道结的三端子垂直和四端子横向器件中自旋注入硅中
3. Spin injection into silicon in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer [J] . Shoichi Sato, Ryosho Nakane, Takato Hada, Physical Review. B, Condensed Matter . 2017,第23a24CD期

机译：用Fe / Mg / MgO / Si隧道连接的三端垂直和四端子横向装置中的硅旋转进入硅中，具有超薄Mg插入层
4. Spin-transfer effects in MgO-based tunnel junctions with an out-of-plane free layer and an in-plane polarizer: Static states and steady-state precession [C] . Kowalska, E., Sluka, V., Fowley, C., IEEE Magnetics Conference . 2015

机译：具有平面外自由层和平面内偏振器的基于MgO的隧道结中的自旋转移效应：静态和稳态进动
5. From Materials to Devices: (I) Ultrathin Flexible Implantable Bio-probes with Biodegradable Sacrificial Layers (II) Carrier Spin Injection and Transport in Diamond [D] . Jiao, Xiangbing. 2018

机译：从材料到设备：（I）具有可生物降解牺牲层的超薄柔性可植入生物探针（II）金刚石的自旋注入和运输
6. Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure [O] . Du-Yeong Lee, Seung-Eun Lee, Tae-Hun Shim, 2016

机译：Co2Fe6B2上下自由层结构之间基于MgO的垂直-电磁-隧道-结自旋阀的隧道-磁阻比比较
7. Erratum: Spin injection into silicon in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer Phys. Rev. B 96, 235204 (2017) [O] . Shoichi Sato, Ryosho Nakane, Takato Hada, 2018

机译：错误：用具有超薄Mg插入层的Fe / Mg / MgO / Si隧道结旋转到三端垂直和四端子横向装置中的硅。 Rev. B 96,235204（2017）

Spin injection into Si in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer

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